| PART |
Description |
Maker |
| G10519-14 |
InGaAs APD with preamp
|
Hamamatsu Corporation
|
| G8925-24 G8925 G8925-21 G8925-22 G8925-23 |
InGaAs PIN photodiode with preamp
|
Hamamatsu Photonics
HAMAMATSU[Hamamatsu Corporation]
|
| FRM5J142GW |
InGaAs-PIN/Preamp Receiver
|
EUDYNA[Eudyna Devices Inc]
|
| FRM5J141GT |
InGaAs-APD/Preamp Receiver
|
Eudyna Devices Inc
|
| FRM5N142GW |
InGaAs-APD/Preamp Receiver
|
EUDYNA[Eudyna Devices Inc]
|
| FRM5N141GT |
InGaAs-APD/Preamp Receiver
|
Eudyna Devices Inc
|
| G91290-22 |
Connector type: FC; supply voltage: 20V; InGaAs PIN photodiode with preamp: mini-DIL type, 1.3/1.55um, 156, 622 Mbps/1.25, 2.5Gbps
|
Hamamatsu Corporation
|
| FRM3Z232LY |
InGaAs-PIN/Preamp Receiver
|
EUDYNA[Eudyna Devices Inc]
|
| G6122ETCKIRD1036E13 |
Infrared detector module with preamp
|
Hamamatsu Corporation
|
| SPS-421 SPS-422 |
(SPS-4xx) IR Receiver PreAmp Module
|
Sanyo Electric
|
| APD-1150 APD-1155 |
InGaAs Avalanche PHOTODIODE InGaAs APD with Mini-Size TO Package
|
Optoway Technology Inc
|
| G8343-11 G8343-12 G8343-21 G8343-22 G8343-31 G8343 |
InGaAs PIN photodiode with preamp
Aluminum Snap-In Capacitor; Capacitance: 1500uF; Voltage: 160V; Case Size: 25x45 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 270uF; Voltage: 400V; Case Size: 35x25 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 180uF; Voltage: 400V; Case Size: 30x25 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 150uF; Voltage: 450V; Case Size: 25x30 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 390uF; Voltage: 200V; Case Size: 22x25 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 330uF; Voltage: 400V; Case Size: 25x45 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 1000uF; Voltage: 200V; Case Size: 25x50 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 270uF; Voltage: 400V; Case Size: 25x40 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 270uF; Voltage: 400V; Case Size: 30x30 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 270uF; Voltage: 400V; Case Size: 22x50 mm; Packaging: Bulk
Optoelectronic 光电
InGaAs PIN photodiode with preamp 铟镓砷PIN光电二极管和前置放大
|
HAMAMATSU[Hamamatsu Corporation]
NXP Semiconductors N.V.
Hamamatsu Photonics K.K.
|
